- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,756
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 COMP N-P-CH | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 500 mA, - 410 mA | 450 mOhms | Enhancement | ||||||
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23,073
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 COMP N-P CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 2.7 A, - 1.9 A | 69 mOhms | Enhancement | PowerTrench | |||||
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3,716
In-stock
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Fairchild Semiconductor | MOSFET SO-8 COMP N-P-CH | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 20 V | 5.5 A | 30 mOhms, 55 mOhms | Enhancement | ||||||
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14,541
In-stock
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onsemi | MOSFET COMP 2X2 20V 3.8A 100mOhm | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 21 V, - 20 V | 3.8 A | 100 mOhms | Enhancement | ||||||
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63,108
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 450 mA | 1.9 Ohms | +/- 1 V | 0.4 nC, 0.5 nC | Enhancement | ||||
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19,800
In-stock
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onsemi | MOSFET 20V Mosfet Complementary | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 220 mA | 1.5 Ohms, 5 Ohms | Enhancement | ||||||
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7,890
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 COMP N-P-CH | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 220 mA | 4 Ohms | Enhancement | ||||||
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4,527
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 COMP N-P-CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 220 mA, - 120 mA | 10.6 Ohms | Enhancement | ||||||
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7,291
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 COMP N-P-CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 680 mA, 460 mA | 450 mOhms | Enhancement | ||||||
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10,237
In-stock
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Diodes Incorporated | MOSFET 250mW 20V | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | ||||||
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5,101
In-stock
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onsemi | MOSFET 20V 5.5A/-4.2A Complementary | 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 5.5 A | 45 mOhms, 80 mOhms | Enhancement | ||||||
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1,400
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 COMP N-P-CH | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 220 mA, - 410 mA | 4 Ohms | Enhancement | ||||||
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4,628
In-stock
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Diodes Incorporated | MOSFET 400mW 20V | 8 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 670 mA | 400 mOhms | Enhancement | ||||||
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1,209
In-stock
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Diodes Incorporated | MOSFET Complementary | 8 V | SMD/SMT | X1-DFN1612-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 750 mA | 400 mOhms | +/- 1 V | Enhancement | |||||
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2,936
In-stock
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Nexperia | MOSFET PMGD290UCEA/SC-88/REEL 7" Q1/T | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 725 mA | 1.8 Ohms | 0.75 V, - 0.8 V | 0.45 nC, 0.76 nC | Enhancement | ||||
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2,265
In-stock
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Diodes Incorporated | MOSFET Enh FET 12Vdss 8Vgss 20V Complementary | 8 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V | 9.5 A, 6.9 A | 17 mOhms, 32 mOhms | 0.6 V to 1.5 V | 18.6 nC | Enhancement | ||||
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3,000
In-stock
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onsemi | MOSFET 8V +/-3.3A P-Channel w/Level Shift | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 8 V | 3.3 A | 80 mOhms | Enhancement | ||||||
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1,731
In-stock
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IR / Infineon | MOSFET MOSFT DUAL N/PCh 12V 6.3A | 8 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V | 6.3 A | 34 mOhms | 5.7 nC |
