- Package / Case :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
23,073
In-stock
|
Fairchild Semiconductor | MOSFET SSOT-6 COMP N-P CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 2.7 A, - 1.9 A | 69 mOhms | Enhancement | PowerTrench | ||||||
|
63,108
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 450 mA | 1.9 Ohms | +/- 1 V | 0.4 nC, 0.5 nC | Enhancement | |||||
|
19,800
In-stock
|
onsemi | MOSFET 20V Mosfet Complementary | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 220 mA | 1.5 Ohms, 5 Ohms | Enhancement | |||||||
|
10,237
In-stock
|
Diodes Incorporated | MOSFET 250mW 20V | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | |||||||
|
5,101
In-stock
|
onsemi | MOSFET 20V 5.5A/-4.2A Complementary | 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 5.5 A | 45 mOhms, 80 mOhms | Enhancement | |||||||
|
4,628
In-stock
|
Diodes Incorporated | MOSFET 400mW 20V | 8 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 670 mA | 400 mOhms | Enhancement | |||||||
|
1,209
In-stock
|
Diodes Incorporated | MOSFET Complementary | 8 V | SMD/SMT | X1-DFN1612-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 750 mA | 400 mOhms | +/- 1 V | Enhancement | ||||||
|
2,936
In-stock
|
Nexperia | MOSFET PMGD290UCEA/SC-88/REEL 7" Q1/T | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 725 mA | 1.8 Ohms | 0.75 V, - 0.8 V | 0.45 nC, 0.76 nC | Enhancement |