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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
16 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 130A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET P-CH 12V 10A 8-TSSOP 8-TSSOP (0.173", 4.40mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-TSSOP 0 4000 P-Channel   - 12V 10A (Ta) 11 mOhm @ 10A, 4.5V 1.2V @ 250µA 100nC @ 4.5V 5050pF @ 10V 1.8V, 4.5V ±8V 1.5W (Ta)
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Infineon Technologies MOSFET P-CH 12V 10A 8-TSSOP 8-TSSOP (0.173", 4.40mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-TSSOP 0 4000 P-Channel   - 12V 10A (Ta) 11 mOhm @ 10A, 4.5V 1.2V @ 250µA 100nC @ 4.5V 5050pF @ 10V 1.8V, 4.5V ±8V 1.5W (Ta)
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Infineon Technologies MOSFET N-CH 40V 130A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 130A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 130A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 350 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET P-CH 12V 10A 8-TSSOP 8-TSSOP (0.173", 4.40mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-TSSOP 0 4000 P-Channel   - 12V 10A (Tc) 11 mOhm @ 10A, 4.5V 1.2V @ 250µA 100nC @ 4.5V 5050pF @ 10V 1.8V, 4.5V ±8V 1.5W (Ta)
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Infineon Technologies MOSFET P-CH 12V 10A 8-TSSOP 8-TSSOP (0.173", 4.40mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-TSSOP 0 100 P-Channel   - 12V 10A (Tc) 11 mOhm @ 10A, 4.5V 1.2V @ 250µA 100nC @ 4.5V 5050pF @ 10V 1.8V, 4.5V ±8V 1.5W (Ta)
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Infineon Technologies MOSFET N-CH 40V 130A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 130A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 130A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 130A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 130A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 150 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 200W (Tc)
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Per Unit
$3.400
RFQ
5
In-stock
Infineon Technologies MOSFET N-CH 40V 130A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel   - 40V 130A (Tc) 6.5 mOhm @ 78A, 10V 1V @ 250µA 100nC @ 4.5V 5330pF @ 25V 4.5V, 10V ±16V 200W (Tc)
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Per Unit
$3.400
RFQ
2,372
In-stock
STMicroelectronics MOSFET N-CH 55V 80A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Obsolete I2PAK 0 1 N-Channel   - 55V 80A (Tc) 8 mOhm @ 40A, 10V 2.5V @ 250µA 100nC @ 4.5V 4350pF @ 25V 5V, 10V ±16V 300W (Tc)
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onsemi MOSFET 2N-CH 12V 27A EFCP 6-SMD, No Lead - Tape & Reel (TR)   Surface Mount 150°C (TJ) Active 6-CSP (1.77x3.54) 0 0 2 N-Channel (Dual) Common Drain 2.5W Logic Level Gate, 2.5V Drive - - - - 100nC @ 4.5V -      
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