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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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Infineon Technologies | MOSFET N-CH 40V 130A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | 200W (Tc) | ||||
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VIEW | onsemi | MOSFET 2N-CH 12V 27A EFCP | 6-SMD, No Lead | - | Tape & Reel (TR) | Surface Mount | 150°C (TJ) | Active | 6-CSP (1.77x3.54) | 0 | 0 | 2 N-Channel (Dual) Common Drain | 2.5W | Logic Level Gate, 2.5V Drive | - | - | - | - | 100nC @ 4.5V | - |
