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186 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
2N6766
5+
$10.000
RFQ
862
In-stock
IR / Infineon MOSFET N-CH 200V TO-204AE TO-3 TO-204AE - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 0 455 N-Channel - 200V 30A (Tc) 90 mOhm @ 30A, 10V 4V @ 250µA 115nC @ 10V - 10V ±20V 4W (Ta), 150W (Tc)
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Infineon Technologies MOSFET N CH 200V 3.7A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 200V 3.7A (Ta) 78 mOhm @ 2.2A, 10V 5V @ 100µA 44nC @ 10V 1750pF @ 100V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 2000 N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 7A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.8A PQFN 8-VQFN Exposed Pad HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 1 N-Channel - 200V 3.8A (Ta), 20A (Tc) 99.9 mOhm @ 5.8A, 10V 5V @ 100µA 30nC @ 10V 1380pF @ 50V 10V ±20V 3.6W (Ta), 8.3W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.8A PQFN 8-VQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 4000 N-Channel - 200V 3.8A (Ta), 20A (Tc) 99.9 mOhm @ 5.8A, 10V 5V @ 100µA 30nC @ 10V 1380pF @ 50V 10V ±20V 3.6W (Ta), 8.3W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 5.1A 8PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 200V 5.1A (Ta) 55 mOhm @ 7.5A, 10V 5V @ 150µA 54nC @ 10V 2290pF @ 100V 10V ±20V 3.6W (Ta), 8.3W (Tc)
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Infineon Technologies MOSFET N-CH 200V 18A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 450 N-Channel - 200V 18A (Tc) 105 mOhm @ 11A, 10V 4.9V @ 100µA 29nC @ 10V 1200pF @ 50V 10V ±20V 100W (Tc)
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Infineon Technologies MOSFET N-CH 200V 18A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 450 N-Channel - 200V 18A (Tc) 105 mOhm @ 11A, 10V 4.9V @ 100µA 29nC @ 10V 1200pF @ 50V 10V ±20V 100W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A D-PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 200V 24A (Tc) 78 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 450 N-Channel - 200V 24A (Tc) 77.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 200V 24A (Tc) 77.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 525 N-Channel - 200V 24A (Tc) 78 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 450 N-Channel - 200V 24A (Tc) 77.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 500 N-Channel - 200V 24A (Tc) 77.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET N-CH 200V 16A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 3200 N-Channel - 200V 16A (Tc) 170 mOhm @ 9.8A, 10V 5.5V @ 250µA 50nC @ 10V 1100pF @ 25V 10V ±30V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.4A DIRECTFET DirectFET™ Isometric MZ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MZ 0 1000 N-Channel - 200V 3.4A (Ta), 19A (Tc) 100 mOhm @ 4.2A, 10V 5V @ 100µA 36nC @ 10V 1500pF @ 25V 10V ±20V 2.8W (Ta), 57W (Tc)
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Infineon Technologies MOSFET N-CH 200V 62A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete TO-262 0 200 N-Channel - 200V 62A (Tc) 26 mOhm @ 46A, 10V 5V @ 250µA 98nC @ 10V 4600pF @ 25V 10V ±30V 330W (Tc)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Infineon Technologies MOSFET N-CH 200V 17A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 10V ±30V 3W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 200V 17A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 6000 N-Channel - 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 10V ±30V 3W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Infineon Technologies MOSFET N-CH 200V 31A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 800 N-Channel - 200V 31A (Tc) 82 mOhm @ 18A, 10V 5.5V @ 250µA 107nC @ 10V 2370pF @ 25V 10V ±30V 3.1W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - D2PAK 0 0 N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 200V 16A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 200V 16A (Tc) 170 mOhm @ 9.8A, 10V 5.5V @ 250µA 50nC @ 10V 1100pF @ 25V 10V ±30V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 665 N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V 2.5W (Ta)
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