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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
2N6766
5+
$10.000
RFQ
862
In-stock
IR / Infineon MOSFET N-CH 200V TO-204AE TO-3 TO-204AE - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 0 455 N-Channel - 200V 30A (Tc) 90 mOhm @ 30A, 10V 4V @ 250µA 115nC @ 10V - 10V ±20V 4W (Ta), 150W (Tc)
Default Photo
Per Unit
$2.190
RFQ
726
In-stock
Infineon Technologies MOSFET N-CH 200V 30A TO-247AC TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 N-Channel - 200V 30A (Tc) 75 mOhm @ 18A, 10V 4V @ 250µA 123nC @ 10V 2159pF @ 25V 10V ±20V 214W (Tc)
Default Photo
Per Unit
$1.552
RFQ
8,000
In-stock
STMicroelectronics MOSFET N-CH 200V 30A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D2PAK 0 1000 N-Channel - 200V 30A (Tc) 75 mOhm @ 15A, 10V 4V @ 250µA 38nC @ 10V 1597pF @ 25V 10V ±20V 125W (Tc)
IRFP250N
Per Unit
$3.080
RFQ
4,180
In-stock
Infineon Technologies MOSFET N-CH 200V 30A TO-247AC TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 N-Channel - 200V 30A (Tc) 75 mOhm @ 18A, 10V 4V @ 250µA 123nC @ 10V 2159pF @ 25V 10V ±20V 214W (Tc)
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