- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,000
In-stock
|
onsemi | MOSFET N-CH 500V 380MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | QFET® | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 0 | 2000 | N-Channel | 500V | 380mA (Tc) | 6 Ohm @ 190mA, 10V | 4V @ 250µA | 6.4nC @ 10V | 195pF @ 25V | 10V | ±30V | 890mW (Ta), 2.08W (Tc) | |||
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18,000
In-stock
|
onsemi | MOSFET N-CH 600V 300MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | QFET® | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 0 | 2000 | N-Channel | 600V | 300mA (Tc) | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V | 1W (Ta), 3W (Tc) | |||
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2,000
In-stock
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onsemi | MOSFET N-CH 60V 500MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | - | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 60000 | 0 | 2000 | N-Channel | 60V | 500mA (Ta) | 5 Ohm @ 200mA, 10V | 3V @ 1mA | - | 40pF @ 10V | 10V | ±20V | 830mW (Ta) |
