- Mounting Style :
- Maximum Operating Temperature :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,601
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 2.6 mOhms | 1.7 V | 54 nC | PowerTrench | ||||||
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2,080
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.6 mOhms | 2 V | 83 nC | Enhancement | PowerTrench | |||
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6,383
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.6 mOhms | 26 nC | OptiMOS | |||||
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1,896
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.6 mOhms | 1 V | 33 nC | Enhancement | OptiMOS | |||
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13,770
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.6 mOhms | 1 V | 33 nC | Enhancement | OptiMOS | |||
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214
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | StrongIRFET | ||||
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3
In-stock
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IR / Infineon | MOSFET MOSFT 55V 240A 2.6mOhm 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 130 nC | Enhancement | ||||||
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2,793
In-stock
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Texas instruments | MOSFET 60V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.6 mOhms | 1.9 V | 41 nC | NextFET | ||||
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39
In-stock
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Toshiba | MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | ||||
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150
In-stock
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Texas instruments | MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 200 A | 2.6 mOhms | 2.6 V | 76 nC | Enhancement | NexFET | |||
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GET PRICE |
48,100
In-stock
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Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.6 mOhms | 1.4 V | 23 nC | NextFET | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 160 A | 2.6 mOhms | 2 V | 112 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 2.6mOhms 73nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 28 A | 2.6 mOhms | 73 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 2.1mOhms 29nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 166 A | 2.6 mOhms | 29 nC | Directfet | |||||||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 160 A | 2.6 mOhms | 2 V | 112 nC | Enhancement |
