- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 10.3 mOhms (1)
- 10.5 mOhms (1)
- 10.7 mOhms (2)
- 10.8 mOhms (1)
- 11.3 mOhms (1)
- 111 mOhms (2)
- 115 mOhms (2)
- 13 mOhms (2)
- 13.1 mOhms (2)
- 14.8 mOhms (1)
- 15.5 mOhms (1)
- 2.2 mOhms (2)
- 2.3 mOhms (1)
- 2.4 mOhms (1)
- 2.5 mOhms (2)
- 2.7 mOhms (3)
- 220 mOhms (1)
- 3.2 mOhms (1)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 4 mOhms (1)
- 4.2 mOhms (5)
- 4.8 mOhms (1)
- 43 mOhms (1)
- 44 mOhms (1)
- 5.7 mOhms (1)
- 7 mOhms (1)
- 7.8 mOhms (1)
- 7.9 mOhms (1)
- 9 mOhms (1)
- Tradename :
- Applied Filters :
43 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,518
In-stock
|
Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 10.5 mOhms | 2 V | 35 nC | Enhancement | ||||
|
|
2,235
In-stock
|
Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 73 A | 7.9 mOhms | 2 V | 35 nC | Enhancement | ||||
|
|
4,205
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10.3 A | 10.3 mOhms | 4.8 V | 35 nC | Enhancement | Directfet | |||
|
|
8,442
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
|
|
7,471
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
61,440
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 98 A | 2.5 mOhms | 1.2 V | 35 nC | Enhancement | |||
|
|
4,375
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 76 A | 9 mOhms | 3 V | 35 nC | Enhancement | OptiMOS | |||
|
|
3,426
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 45 A | 13.1 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
|
|
2,900
In-stock
|
Infineon Technologies | MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | DirectFET-M4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 68 A | 7 mOhms | 35 nC | Enhancement | |||||
|
|
4,847
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement | OptiMOS | |||
|
|
1,909
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 15A VSON-4 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
|
4,836
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | |||
|
|
1,970
In-stock
|
Fairchild Semiconductor | MOSFET 60/20V 90A N-chnl PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 11.3 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
|
|
4,389
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
|
|
1,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
|
|
2,476
In-stock
|
onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | ||||
|
|
1,384
In-stock
|
onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 107 A | 4.8 mOhms | 1.2 V | 35 nC | Enhancement | ||||
|
|
1,382
In-stock
|
Fairchild Semiconductor | MOSFET MV7 N Channel Power Trench MosFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 15.5 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
|
|
400
In-stock
|
Fairchild Semiconductor | MOSFET 60V SG N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 10.8 mOhms | 2 V | 35 nC | Enhancement | ||||
|
|
523
In-stock
|
onsemi | MOSFET 100V HD3E NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 44 mOhms | 2 V | 35 nC | |||||
|
|
1,401
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
|
|
782
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
|
|
18,400
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | ||||
|
|
120
In-stock
|
onsemi | MOSFET NFET SO8FL 40V 110A | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2.3 mOhms | 1.2 V | 35 nC | Enhancement | ||||
|
|
8,840
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | |||
|
|
2,528
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 3.5 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | |||
|
|
GET PRICE |
17,600
In-stock
|
Texas instruments | MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 7.8 mOhms | 2.2 V | 35 nC | Enhancement | |||
|
|
4,927
In-stock
|
Fairchild Semiconductor | MOSFET -40V P-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.8 A | 14.8 mOhms | 35 nC | PowerTrench | |||||
|
|
4,950
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.7 mOhms | 1.2 V | 35 nC | Enhancement | ||||
|
|
4,970
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement |
