- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
2,500
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | ||
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GET PRICE |
4,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -15A 7.2mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC | ||||||||
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VIEW | Toshiba | MOSFET MOSFET -30V -15A | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 33.2 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET MOSFET -30V -15A | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 33.2 mOhms | |||||||||||
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GET PRICE |
2,729
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 7.2mOhms 34nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC |
