- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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18,088
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15 A | 76 mOhms | Enhancement | PowerTrench | ||||
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4,189
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 8.2mOhms 87nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | Enhancement | ||||
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2,874
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | ||
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GET PRICE |
2,406
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | SIPMOS | ||
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GET PRICE |
2,470
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | |||
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217,600
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -15A 8.2mOhm 87nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | |||||||
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GET PRICE |
1,248
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | |||
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GET PRICE |
2,500
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | ||
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GET PRICE |
993
In-stock
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Fairchild Semiconductor | MOSFET 120V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 120 V | - 15 A | 200 mOhms | Enhancement | QFET | ||||
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GET PRICE |
2,570
In-stock
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Infineon Technologies | MOSFET 20V 1 P-CH HEXFET 31mOhms 12nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 31 mOhms | 12 nC | |||||||
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GET PRICE |
536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | |||
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GET PRICE |
461
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 240 mOhms | 37 nC | Enhancement | SIPMOS | |||
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GET PRICE |
192
In-stock
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Fairchild Semiconductor | MOSFET 120V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 120 V | - 15 A | 200 mOhms | Enhancement | QFET | ||||
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GET PRICE |
4,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -15A 7.2mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC | ||||||||
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GET PRICE |
29,885
In-stock
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Texas instruments | MOSFET P-CH Pwr MOSFET | - 12 V | SMD/SMT | VSONP-8 | - 55 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.9 mOhms | - 900 mV | 7.5 nC | Enhancement | NexFET | ||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||
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VIEW | IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET P-Ch MOS 1100 pF 29W PD -15A -40V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 15 A | 48 mOhms | ||||||||||
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VIEW | Vishay Semiconductors | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 15 A | 0.013 Ohms | - 1 V | 38 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET P-Ch MOS 1770pF 41W 36nC -15A -60V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15 A | 63 mOhms | 36 nC | |||||||||
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VIEW | IXYS | MOSFET -150V -15A | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET MOSFET -30V -15A | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 33.2 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET MOSFET -30V -15A | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 33.2 mOhms | |||||||||||
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GET PRICE |
2,729
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 7.2mOhms 34nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC |
