Build a global manufacturer and supplier trusted trading platform.
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFR100N25
30+
$16.470
120+
$14.510
270+
$13.800
510+
$12.910
VIEW
RFQ
IXYS MOSFET 87 Amps 250V 0.027 Rds 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 87 A 27 mOhms Enhancement HyperFET
IXFX120N25
30+
$15.160
120+
$13.350
270+
$12.700
510+
$11.880
VIEW
RFQ
IXYS MOSFET 120 Amps 250V 0.022 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 120 A 22 mOhms Enhancement HyperFET
IXFX62N25
30+
$9.720
120+
$8.560
270+
$8.140
510+
$7.620
VIEW
RFQ
IXYS MOSFET 62 Amps 250V 0.035 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 62 A 35 mOhms Enhancement HyperFET
IXFX100N25
30+
$14.660
120+
$12.910
270+
$12.280
510+
$11.490
VIEW
RFQ
IXYS MOSFET 100 Amps 250V 0.027 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 100 A 27 mOhms Enhancement HyperFET
IXFH60N25Q
30+
$11.030
120+
$9.720
270+
$9.240
510+
$8.650
VIEW
RFQ
IXYS MOSFET 60 Amps 250V 0.047 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 60 A 47 mOhms Enhancement HyperFET
Page 1 / 1