- Mounting Style :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,480
In-stock
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STMicroelectronics | MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.5 mOhms | 3 V | 130 nC | Enhancement | ||||
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2,954
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 49 A | 2.5 mOhms | 21 nC, 44 nC | ||||||||
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GET PRICE |
61,440
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 98 A | 2.5 mOhms | 1.2 V | 35 nC | Enhancement | |||
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11,035
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement | OptiMOS | |||
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33,600
In-stock
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Infineon Technologies | MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||
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GET PRICE |
4,110
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | ||
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536
In-stock
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Infineon Technologies | MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||
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779
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 68.6 nC | Enhancement | ||||
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219
In-stock
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IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | ||||
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58
In-stock
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IXYS | MOSFET 300 Amps 40V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 300 A | 2.5 mOhms | |||||||||||
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11
In-stock
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IXYS | MOSFET Trench T2 Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 40 V | 300 A | 2.5 mOhms | |||||||||||
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31
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 128 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement | ||||||
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50
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 82A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 82 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement | ||||||
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GET PRICE |
47,300
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 98 A | 2.5 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | ||
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2,399
In-stock
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Infineon Technologies | MOSFET 40V 120A 2.5mOhm 90nC StrongIRFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | ||||
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VIEW | IXYS | MOSFET 300 Amps 40V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 300 A | 2.5 mOhms | ||||||||
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VIEW | IXYS | MOSFET 300 Amps 40V 0.025 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 300 A | 2.5 mOhms | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement | ||||
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321
In-stock
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IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, D2-Pak | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET |
