- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,818
In-stock
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STMicroelectronics | MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 2.1 A | 6.5 Ohms | 19.5 nC | Enhancement | |||||
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1,178
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.1 A | 450 mOhms | Enhancement | ||||||
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6,373
In-stock
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Nexperia | MOSFET 40V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2.1 A | 95 mOhms | 1 V | 3.6 nC | Enhancement | ||||
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984
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.1 A | 450 mOhms | Enhancement | ||||||
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5,853
In-stock
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Texas instruments | MOSFET 20V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.1 A | 19.2 mOhms | 1.45 V | 2.5 nC | NexFET | ||||
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GET PRICE |
29,500
In-stock
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Texas instruments | MOSFET 12V,N-Ch FemtoFET MOSFET | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 2.1 A | 180 mOhms | 850 mV | 1.06 nC | ||||
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15,000
In-stock
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onsemi | MOSFET 30V 2.1A N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.1 A | 125 mOhms | Enhancement |
