MOSFET - Kaimeite

Applied Filters :

3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	FDB16AN08A0	1+ $2.110 10+ $1.790 100+ $1.430 500+ $1.250 800+ $1.040		PDF RFQ	1,355 In-stock	Fairchild Semiconductor	MOSFET Discrete Auto N-Ch UltraFET Trench	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	75 V	58 A	13 mOhms			Enhancement	PowerTrench
	IPB123N10N3 G	1+ $1.580 10+ $1.350 100+ $1.040 500+ $0.915 1000+ $0.723		PDF RFQ	1,800 In-stock	Infineon Technologies	MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	58 A	10.7 mOhms	2 V	35 nC	Enhancement	OptiMOS
	IPB123N10N3GATMA1	1+ $1.580 10+ $1.350 100+ $1.040 500+ $0.915 1000+ $0.723		PDF RFQ	782 In-stock	Infineon Technologies	MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	58 A	10.7 mOhms	2 V	35 nC	Enhancement	OptiMOS

FDB16AN08A0

FDB16AN08A0

Fairchild Semiconductor

MOSFET Discrete Auto N-Ch UltraFET Trench

Stock : 1,355

1+: $2.110

10+: $1.790

100+: $1.430

500+: $1.250

800+: $1.040

IPB123N10N3 G

IPB123N10N3 G

Infineon Technologies

MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3

Stock : 1,800

1+: $1.580

10+: $1.350

100+: $1.040

500+: $0.915

1000+: $0.723

IPB123N10N3GATMA1

IPB123N10N3GATMA1

Infineon Technologies

MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3

Stock : 782

1+: $1.580

10+: $1.350

100+: $1.040

500+: $0.915

1000+: $0.723

Page 1 / 1