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- Vds - Drain-Source Breakdown Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
993
In-stock
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Fairchild Semiconductor | MOSFET 120V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 120 V | - 15 A | 200 mOhms | Enhancement | QFET | |||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | ||
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GET PRICE |
461
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 240 mOhms | 37 nC | Enhancement | SIPMOS | ||
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GET PRICE |
192
In-stock
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Fairchild Semiconductor | MOSFET 120V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 120 V | - 15 A | 200 mOhms | Enhancement | QFET | |||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms |
