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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPD031N06L3GATMA1
1+
$1.850
10+
$1.570
100+
$1.260
500+
$1.100
2500+
$0.847
RFQ
1,400
In-stock
Infineon Technologies MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 100 A 2.5 mOhms 1.2 V 79 nC Enhancement OptiMOS
DMTH4004SCTBQ-13
1+
$1.530
10+
$1.300
100+
$1.040
500+
$0.911
800+
$0.754
RFQ
779
In-stock
Diodes Incorporated MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 2.5 mOhms 2 V 68.6 nC Enhancement  
IPD031N06L3 G
1+
$1.850
10+
$1.570
100+
$1.260
500+
$1.100
2500+
$0.847
RFQ
127
In-stock
Infineon Technologies MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 100 A 2.5 mOhms 1.2 V 79 nC Enhancement OptiMOS
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