- Vgs - Gate-Source Voltage :
- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 0.002 Ohms (1)
- 0.00225 Ohms (1)
- 0.0027 Ohms (1)
- 0.0028 Ohms (1)
- 0.003 Ohms (3)
- 0.007 Ohms (1)
- 1.4 mOhms (1)
- 1.7 mOhms (1)
- 1.9 mOhms (2)
- 1.98 mOhms (2)
- 10 mOhms (2)
- 10.5 mOhms (1)
- 13 mOhms (1)
- 16.3 mOhms (1)
- 2.1 mOhms (2)
- 2.3 mOhms (2)
- 2.5 mOhms (3)
- 2.7 mOhms (5)
- 2.8 mOhms (3)
- 2.9 mOhms (3)
- 3.1 mOhms (3)
- 3.2 mOhms (1)
- 3.3 mOhms (4)
- 3.4 mOhms (2)
- 3.5 mOhms (1)
- 3.6 mOhms (3)
- 3.9 mOhms (2)
- 4.25 mOhms (2)
- 4.4 mOhms (1)
- 4.7 mOhms (2)
- 4.8 mOhms (3)
- 4.9 mOhms (1)
- 5 mOhms (2)
- 5.1 mOhms (1)
- 5.4 mOhms (1)
- 5.6 mOhms (2)
- 5.7 mOhms (1)
- 5.8 mOhms (2)
- 6 mOhms (1)
- 6.2 mOhms (4)
- 6.5 mOhms (1)
- 6.6 mOhms (1)
- 7 mOhms (2)
- 7.1 mOhms (2)
- 7.6 mOhms (2)
- 8 mOhms (2)
- 8.4 mOhms (1)
- 9 mOhms (1)
- Qg - Gate Charge :
-
- 100 nC (1)
- 103 nC (2)
- 105 nC (1)
- 110 nC (1)
- 116 nC (1)
- 117 nC (9)
- 124 nC (1)
- 130 nC (1)
- 135 nC (1)
- 137 nC (1)
- 145 nC (1)
- 153 nC (1)
- 16.4 nC (1)
- 185 nC (1)
- 240 nC (1)
- 246 nC (4)
- 27 nC (1)
- 30 nC (2)
- 34 nC (1)
- 35 nC (1)
- 38 nC (1)
- 40 nC (1)
- 41.3 nC (1)
- 41.9 nC (2)
- 42 nC (2)
- 44 nC (2)
- 47.1 nC (1)
- 62 nC (1)
- 63 nC (1)
- 66 nC (6)
- 68 nC (1)
- 68.6 nC (2)
- 76 nC (3)
- 79 nC (2)
- 82 nC (1)
- 88 nC (1)
- 90 nC (2)
- 91 nC (1)
- 93 nC (4)
- 95.4 nC (2)
- 96 nC (1)
88 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
29,260
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
9,977
In-stock
|
Fairchild Semiconductor | MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 8.4 mOhms | 2 V | 68 nC | Enhancement | |||
|
|
GET PRICE |
29,560
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
7,644
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.4 mOhms | Enhancement | OptiMOS | ||||
|
|
GET PRICE |
13,330
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
2,406
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.4 mOhms | 3.1 V | 88 nC | OptiMOS | |||
|
|
GET PRICE |
2,615
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | ||||
|
|
GET PRICE |
3,909
In-stock
|
Diodes Incorporated | MOSFET Enh Mode FET 41V to 60V TO263 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.9 mOhms | 2 V | 95.4 nC | Enhancement | |||
|
|
GET PRICE |
2,976
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 100 Amp | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.2 mOhms | Enhancement | |||||
|
|
GET PRICE |
2,500
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||
|
|
GET PRICE |
2,495
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | 2 V | 95.4 nC | Enhancement | |||
|
|
GET PRICE |
3,520
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 6.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
12,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
1,389
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 8 mOhms | 2 V | 100 nC | Enhancement | |||
|
|
GET PRICE |
4,940
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 6.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
786
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.5 mOhms | OptiMOS | |||||
|
|
GET PRICE |
1,571
In-stock
|
STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | |||
|
|
GET PRICE |
690
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
1,906
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
503
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 4.8 mOhms | 3 V | 137 nC | OptiMOS | |||
|
|
GET PRICE |
559
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.8 mOhms | Enhancement | OptiMOS | ||||
|
|
GET PRICE |
1,400
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
963
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 6.5 mOhms | 1.2 V | 246 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
778
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
920
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 7.1 mOhms | Enhancement | OptiMOS | ||||
|
|
GET PRICE |
1,965
In-stock
|
Vishay Semiconductors | MOSFET 30V 100A 136W N-Channel MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 0.0027 Ohms | 1.5 V | 116 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
696
In-stock
|
Vishay Semiconductors | MOSFET 100V 100A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 0.007 Ohms | 1.5 V | 185 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
800
In-stock
|
Vishay Semiconductors | MOSFET 40V 100A 157W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.00225 Ohms | 2.5 V | 145 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
1,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | |||
|
|
GET PRICE |
2,300
In-stock
|
Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement |
