Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB042N10N3 G
GET PRICE
RFQ
29,560
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 100 A 3.6 mOhms 2 V 117 nC Enhancement OptiMOS
IPB042N10N3GATMA1
GET PRICE
RFQ
19,900
In-stock
Infineon Technologies MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 100 A 3.6 mOhms 2 V 117 nC Enhancement OptiMOS
2SK4066-E
VIEW
RFQ
onsemi MOSFET POWER MOSFET 20 V SMD/SMT TO-263-3   + 150 C Bulk 1 Channel Si N-Channel 60 V 100 A 3.6 mOhms        
2SK4066-DL-E
VIEW
RFQ
onsemi MOSFET POWER MOSFET 20 V SMD/SMT TO-263-3   + 150 C Reel 1 Channel Si N-Channel 60 V 100 A 3.6 mOhms        
IPB042N10N3GE818XT
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 100V 100A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 100 A 3.6 mOhms 2 V 117 nC Enhancement  
Page 1 / 1