- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
35 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,697
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench SyncFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 3.6 mOhms | Enhancement | PowerTrench SyncFET | |||||
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2,478
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan SyncFET PowerTrench | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 3.6 mOhms | 1.9 V | 33 nC | PowerTrench SyncFET | ||||||
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29,560
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | OptiMOS | |||
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5,610
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 147 A | 3.6 mOhms | 3.7 V | 110 nC | StrongIRFET | ||||
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627
In-stock
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IR / Infineon | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | ||||||||
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2,500
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | ||||
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26,350
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 19 A | 3.6 mOhms | 1.5 V | 27 nC | PowerTrench SyncFET | |||||
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1,512
In-stock
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Fairchild Semiconductor | MOSFET 20V N-CH PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 20 A | 3.6 mOhms | 24 nC, 44 nC | Enhancement | PowerTrench | ||||
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398
In-stock
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Fairchild Semiconductor | MOSFET PT5 NCH 100V 3.6Mohm PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 176 A | 3.6 mOhms | 3 V | 89 nC | PowerTrench | ||||
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2,326
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | |||
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651
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | ||||||||
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4,440
In-stock
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onsemi | MOSFET NFET U8FL 30V 75A 3.6MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 75 A | 3.6 mOhms | |||||||||||
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556
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | |||||
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282
In-stock
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Fairchild Semiconductor | MOSFET 30V 114A 5.3 OHM N-CH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 114 A | 3.6 mOhms | Enhancement | PowerTrench | |||||
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543
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | ||||
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19,900
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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549
In-stock
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IR / Infineon | MOSFET MOSFT 40V 210A 3.6mOhm 130nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 210 A | 3.6 mOhms | 130 nC | ||||||||
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756
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.6 mOhms | 1 V | 48 nC | Enhancement | OptiMOS | |||
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176
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 170A 3.6mOhm 130nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 170 A | 3.6 mOhms | 130 nC | ||||||||
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496
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | ||||
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23
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | ||||
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52
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | OptiMOS | |||
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550
In-stock
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Toshiba | MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 20 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 120 V | 179 A | 3.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | ||||||
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39,569
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | OptiMOS | |||
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3,900
In-stock
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onsemi | MOSFET NFET U8FL 30V 75A 3.6MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 102 A | 3.6 mOhms | |||||||||||
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2,500
In-stock
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onsemi | MOSFET 30V 136A 4.3 mOhm Single N-Chan SO-8 | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.1 A | 3.6 mOhms | 1.5 V | 58.9 nC | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | ||||
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VIEW | onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.6 mOhms | ||||||||
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20,000
In-stock
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onsemi | MOSFET NFET U8FL 30V 75A 3.6MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 75 A | 3.6 mOhms |
