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- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
690
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS | ||
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GET PRICE |
2,300
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement | |||
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GET PRICE |
685
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | |||
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GET PRICE |
494
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS |
