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Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB031NE7N3 G
1+
$2.710
10+
$2.300
100+
$1.840
500+
$1.610
1000+
$1.340
RFQ
690
In-stock
Infineon Technologies MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 100 A 2.7 mOhms 2.3 V 117 nC Enhancement OptiMOS
DMTH4004SPSQ-13
1+
$1.190
10+
$1.010
100+
$0.775
500+
$0.685
2500+
$0.479
RFQ
2,300
In-stock
Diodes Incorporated MOSFET 40V N-Ch Enh FET Low Rdson 20 V SMD/SMT POWERDI5060-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 2.7 mOhms 4 V 68.6 nC Enhancement  
IPB031NE7N3GATMA1
1000+
$1.340
2000+
$1.240
5000+
$1.200
10000+
$1.150
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 100 A 2.7 mOhms 2.3 V 117 nC Enhancement OptiMOS
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