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Vds - Drain-Source Breakdown Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC011N03LS
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RFQ
20,446
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Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 100 A 900 uOhms 1.2 V 96 nC Enhancement OptiMOS
BSC010NE2LSI
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RFQ
10,906
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Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 100 A 900 uOhms 1.2 V 78 nC Enhancement OptiMOS
BSC010N04LSI
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RFQ
3,733
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Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 900 uOhms 1.2 V 122 nC Enhancement  
BSC010NE2LSIATMA1
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RFQ
5,000
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Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 100 A 900 uOhms 1.2 V 78 nC Enhancement OptiMOS
BSC011N03LSI
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RFQ
988
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Infineon Technologies MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 100 A 900 uOhms 1.2 V 90 nC Enhancement  
BSC010N04LSIATMA1
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RFQ
Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 900 uOhms 1.2 V 122 nC Enhancement OptiMOS
BSC011N03LSATMA1
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 100 A 900 uOhms 1.2 V 96 nC Enhancement OptiMOS
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