MOSFET - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFZ140N25T		GET PRICE	PDF RFQ	100 In-stock	IXYS	MOSFET	20 V	SMD/SMT	DE-475-6	- 55 C	+ 150 C		1 Channel	Si	N-Channel	250 V	100 A	17 mOhms	2.5 V	255 nC	Enhancement	GigaMOS, HiperFET
	SQD100N04-3m6_GE3		GET PRICE	PDF RFQ	1,906 In-stock	Vishay Semiconductors	MOSFET N-Channel 40V AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	0.003 Ohms	2.5 V	105 nC	Enhancement	TrenchFET
	SQM100N04-2m7_GE3		GET PRICE	PDF RFQ	800 In-stock	Vishay Semiconductors	MOSFET 40V 100A 157W AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	0.00225 Ohms	2.5 V	145 nC	Enhancement	TrenchFET
	TK100S04N1L,LQ		GET PRICE	PDF RFQ	2,000 In-stock	Toshiba	MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	1.9 mOhms	2.5 V	76 nC	Enhancement
	SQP100N04-3m6_GE3		GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	100 A	0.003 Ohms	2.5 V	135 nC	Enhancement
	SQD100N03-3M4_GE3		GET PRICE VIEW	PDF RFQ		Vishay Semiconductors	MOSFET 30V 100A 136W N-Channel MOSFET	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	100 A	0.0028 Ohms	2.5 V	124 nC	Enhancement	TrenchFET
	IRLH5036TRPBF		GET PRICE	PDF RFQ	3,005 In-stock	Infineon Technologies	MOSFET 60V 1 N-CH HEXFET 4.4mOhms 44nC	16 V	SMD/SMT	PQFN-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	100 A	5.5 mOhms	2.5 V	90 nC

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