MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQD100N04-3m6_GE3	1+ $1.660 10+ $1.330 100+ $1.020 500+ $0.898 2000+ $0.662		PDF RFQ	1,906 In-stock	Vishay Semiconductors	MOSFET N-Channel 40V AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	0.003 Ohms	2.5 V	105 nC	Enhancement	TrenchFET
	TK100S04N1L,LQ	1+ $2.550 10+ $2.060 100+ $1.640 500+ $1.440 2000+ $1.100		PDF RFQ	2,000 In-stock	Toshiba	MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	100 A	1.9 mOhms	2.5 V	76 nC	Enhancement
	SQD100N03-3M4_GE3	2000+ $0.659 4000+ $0.626 10000+ $0.603	GET PRICE VIEW	PDF RFQ		Vishay Semiconductors	MOSFET 30V 100A 136W N-Channel MOSFET	+/- 20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	100 A	0.0028 Ohms	2.5 V	124 nC	Enhancement	TrenchFET

SQD100N04-3m6_GE3

SQD100N04-3m6_GE3

Vishay Semiconductors

MOSFET N-Channel 40V AEC-Q101 Qualified

Stock : 1,906

1+: $1.660

10+: $1.330

100+: $1.020

500+: $0.898

2000+: $0.662

TK100S04N1L,LQ

TK100S04N1L,LQ

Toshiba

MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK

Stock : 2,000

1+: $2.550

10+: $2.060

100+: $1.640

500+: $1.440

2000+: $1.100

SQD100N03-3M4_GE3

SQD100N03-3M4_GE3

Vishay Semiconductors

MOSFET 30V 100A 136W N-Channel MOSFET

Stock : 0

2000+: $0.659

4000+: $0.626

10000+: $0.603

GET PRICE

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