- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,935
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
|
|
2,997
In-stock
|
Infineon Technologies | MOSFET MOSFT 20V 100A 4.0mOhm 2.5V dr cpbl | 12 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | |||||||||
|
|
4,648
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | OptiMOS |
