- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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778
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | |||
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685
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | ||||
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391
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 3.1mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.1 mOhms | 2.2 V to 3.9 V | 66 nC | Enhancement | CoolIRFet | |||
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494
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | |||
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21
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | ||||
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25
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 2.4mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.1 mOhms | 2.2 V to 3.9 V | 66 nC | Enhancement | CoolIRFet |
