- Package / Case :
- Rds On - Drain-Source Resistance :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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969
In-stock
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Texas instruments | MOSFET CSD19532Q5B Pkg spin | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6.6 mOhms | 2.2 V | 44 nC | Enhancement | ||||||
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95
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET |