- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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154,200
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CHANNEL MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 52 A | 49 mOhms | Enhancement | ||||||
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373
In-stock
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Fairchild Semiconductor | MOSFET 600V, 52A, 72mOhm N-Channel Mosfet | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 65 mOhms | 165 nC | Enhancement | SuperFET II FRFET | ||||
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600
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V slow version | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 70 mOhms | 2.5 V | 128 nC | Enhancement | SuperFET II | |||
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384
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | |||
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423
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | ||||||
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598
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
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1,432
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 52 A | 21 mOhms | Enhancement | QFET | |||||
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160
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 72 mOhms | 3.5 V | 95 nC | SuperFET II | ||||
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72
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
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86
In-stock
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IXYS | MOSFET 52 Amps 300V 0.066 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 66 mOhms | Enhancement | ||||||
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49
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | ||||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | ||||||
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29
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 52 A | 68 mOhms | 3 V | 113 nC | Enhancement | ||||
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38
In-stock
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IXYS | MOSFET 300V 52A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 60 mOhms | Enhancement | HyperFET | |||||
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29,600
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 52A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 70 mOhms | Enhancement | CoolMOS | |||||
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59
In-stock
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IXYS | MOSFET 52 Amps 300V 0.066 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 73 mOhms | 5 V | 110 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 52 Amps 600V 0.12 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 115 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 52 Amps 600V 0.12 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 115 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 300V 52A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 60 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 52 A | 160 mOhms | 3.5 V to 6.5 V | 308 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 52 Amps 300V 0.066 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 66 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 52 Amps 300V 0.06 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 60 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 52 Amps 300V | Through Hole | TO-247-3 | Tube | Si | 300 V | 52 A |
