- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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36,021
In-stock
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Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.8 Ohms | 0.2 nC | Enhancement | |||||
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1,882
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
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2,195
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
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1,041
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
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1,421
In-stock
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Infineon Technologies | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | 800 mV | 6.4 nC | Enhancement | ||||
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1,658
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | ||||
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1,245
In-stock
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Infineon Technologies | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | 800 mV | 6.4 nC | Enhancement | ||||
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2,644
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | ||||
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VIEW | Nexperia | MOSFET NX7002BKM/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
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20,100
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 350 mA | 6 Ohms | Enhancement | ||||||
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240
In-stock
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Nexperia | MOSFET NX7002BKMB/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
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4,000
In-stock
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Nexperia | MOSFET MOSFET N-CH DUAL 60V | 20 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 350 mA | 1.6 Ohms | 1.75 V | 0.8 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 240V 50mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
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33
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 6.5 Ohms | Depletion |