- Vgs - Gate-Source Voltage :
- Mounting Style :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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VIEW | IXYS | MOSFET 360 Amps 100V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 29 A | 2.6 mOhms | 4.5 V | 145 nC | Enhancement | |||||
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100
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | |||||
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150
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | |||||
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686
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | ||||
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920
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.6 mOhms | 124 nC | OptiMOS | ||||||
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42
In-stock
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IXYS | MOSFET SMPD MOSFETs Power Device | SMD/SMT | SMPD-24 | Tube | Si | N-Channel | 100 V | 334 A | 2.6 mOhms | ||||||||||||
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800
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | ||||
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799
In-stock
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Siliconix / Vishay | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.6 mOhms | 2.5 V | 165 nC | Enhancement | |||||
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80
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 2.6mOhms 49nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||||
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128
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 2.6 mOhms | 4 V | 190 nC | Enhancement | |||||
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199
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 2.6mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 130 nC | Enhancement | |||||||
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600
In-stock
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Infineon Technologies | MOSFET MOSFET, 40V, 118A, 3 62 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 2.6 mOhms | 2.2 V | 93 nC | Enhancement | StrongIRFET | ||||
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750
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | ||||
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GET PRICE |
299,000
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.6 mOhms | 2.2 V | 90 nC | Enhancement | StrongIRFET |