- Vgs - Gate-Source Voltage :
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38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,850
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | |||
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4,601
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 2.6 mOhms | 1.7 V | 54 nC | PowerTrench | ||||||
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2,775
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | ||||
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2,080
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.6 mOhms | 2 V | 83 nC | Enhancement | PowerTrench | |||
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VIEW | IXYS | MOSFET 360 Amps 100V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 29 A | 2.6 mOhms | 4.5 V | 145 nC | Enhancement | ||||
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6,383
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.6 mOhms | 26 nC | OptiMOS | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.6 mOhms | 1.5 V | 80 nC | Enhancement | ||||
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100
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
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150
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
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686
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
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920
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.6 mOhms | 124 nC | OptiMOS | |||||
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42
In-stock
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IXYS | MOSFET SMPD MOSFETs Power Device | SMD/SMT | SMPD-24 | Tube | Si | N-Channel | 100 V | 334 A | 2.6 mOhms | |||||||||||
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1,896
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.6 mOhms | 1 V | 33 nC | Enhancement | OptiMOS | |||
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800
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
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799
In-stock
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Siliconix / Vishay | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.6 mOhms | 2.5 V | 165 nC | Enhancement | ||||
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13,770
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.6 mOhms | 1 V | 33 nC | Enhancement | OptiMOS | |||
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80
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 2.6mOhms 49nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | ||||
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128
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 2.6 mOhms | 4 V | 190 nC | Enhancement | ||||
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214
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | StrongIRFET | ||||
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199
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 2.6mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 130 nC | Enhancement | ||||||
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600
In-stock
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Infineon Technologies | MOSFET MOSFET, 40V, 118A, 3 62 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 2.6 mOhms | 2.2 V | 93 nC | Enhancement | StrongIRFET | |||
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90
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 49 A | 2.6 mOhms | 46 nC | Enhancement | PowerTrench SyncFET | |||||
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3
In-stock
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IR / Infineon | MOSFET MOSFT 55V 240A 2.6mOhm 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 130 nC | Enhancement | ||||||
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2,793
In-stock
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Texas instruments | MOSFET 60V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.6 mOhms | 1.9 V | 41 nC | NextFET | ||||
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50,000
In-stock
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Texas instruments | MOSFET DualCool N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2.6 mOhms | 1.1 V | 14 nC | NexFET | ||||
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722
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.6 mOhms | 1.1 V | 18 nC | NexFET | ||||
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2,437
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2.6 mOhms | 1.6 V | 16.6 nC | Enhancement | NexFET | |||
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39
In-stock
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Toshiba | MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | ||||
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150
In-stock
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Texas instruments | MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 200 A | 2.6 mOhms | 2.6 V | 76 nC | Enhancement | NexFET | |||
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750
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET |
