- Manufacture :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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80
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 2.6mOhms 49nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||
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199
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 2.6mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 130 nC | Enhancement | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 160 A | 2.6 mOhms | 2 V | 112 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 160 A | 2.6 mOhms | 2 V | 112 nC | Enhancement |
