- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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398
In-stock
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Fairchild Semiconductor | MOSFET PT5 NCH 100V 3.6Mohm PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 176 A | 3.6 mOhms | 3 V | 89 nC | PowerTrench | |||||
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2,326
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||||
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651
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | |||||||||
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282
In-stock
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Fairchild Semiconductor | MOSFET 30V 114A 5.3 OHM N-CH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 114 A | 3.6 mOhms | Enhancement | PowerTrench | ||||||
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549
In-stock
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IR / Infineon | MOSFET MOSFT 40V 210A 3.6mOhm 130nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 210 A | 3.6 mOhms | 130 nC | |||||||||
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496
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | |||||
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23
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | |||||
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52
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | OptiMOS | ||||
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550
In-stock
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Toshiba | MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 20 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 120 V | 179 A | 3.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | Enhancement | OptiMOS |