- Manufacture :
- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,199
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | OptiMOS | |||
|
|
627
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | ||||||||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | ||||
|
|
543
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | ||||
|
|
756
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.6 mOhms | 1 V | 48 nC | Enhancement | OptiMOS | |||
|
|
176
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 170A 3.6mOhm 130nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 170 A | 3.6 mOhms | 130 nC | ||||||||
|
|
39,569
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.6 mOhms | 1 V | 48 nC | Enhancement | ||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.6 mOhms | 1 V to 3 V | 80 nC |
