- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
50,000
In-stock
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onsemi | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | Enhancement | QFET | |||||
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5,444
In-stock
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IR / Infineon | MOSFET MOSFT 100V 6.9A 26mOhm 61nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | |||||||||
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1,497
In-stock
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IR / Infineon | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 24 A | 26 mOhms | 14 nC | Enhancement | ||||||
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770
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | 93.3 nC | Enhancement | ||||||
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24
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | 93.3 nC | Enhancement | ||||||
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2,734
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | Enhancement | |||||||
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VIEW | Fairchild Semiconductor | MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 26 mOhms | 3 V | 86 nC | |||||||
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VIEW | IR / Infineon | MOSFET 100V 1 N-CH HEXFET 26mOhms 61nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 26 mOhms | Enhancement | SIPMOS |