- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Tradename :
- Applied Filters :
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
50,000
In-stock
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onsemi | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | Enhancement | QFET | ||||
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2,220
In-stock
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Fairchild Semiconductor | MOSFET SOT-223 P-CH ENHANCE | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 26 mOhms | Enhancement | ||||||
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3,657
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 47 A | 26 mOhms | Enhancement | QFET | |||||
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1,860
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | QFET | |||||
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923
In-stock
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Fairchild Semiconductor | MOSFET 150V 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 26 mOhms | 2 V | 97 nC | Enhancement | PowerTrench | |||
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21,818
In-stock
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onsemi | MOSFET -20V -5.4A P-Channel | 10 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.4 A | 26 mOhms | Enhancement | ||||||
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2,382
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | Enhancement | |||||
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5,444
In-stock
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IR / Infineon | MOSFET MOSFT 100V 6.9A 26mOhm 61nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | ||||||||
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4,443
In-stock
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onsemi | MOSFET 60V 45A N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 26 mOhms | Enhancement | ||||||
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126
In-stock
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IXYS | MOSFET 82 Amps 300V 0.026 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 26 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
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614
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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3,240
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -7A 26mOhm 46nC Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7 A | 26 mOhms | 46 nC | Enhancement | |||||
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717
In-stock
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Fairchild Semiconductor | MOSFET -60V -30A P-Channel | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | ||||||
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81,700
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 62A 26mOhm 70nC Qg | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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1,497
In-stock
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IR / Infineon | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 24 A | 26 mOhms | 14 nC | Enhancement | |||||
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770
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | 93.3 nC | Enhancement | |||||
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2,042
In-stock
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IR / Infineon | MOSFET MOSFT 75V 42A 26mOhm 74nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | ||||||||
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907
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7 A | 26 mOhms | 6.6 nC, 13.6 nC | ||||||||
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699
In-stock
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Fairchild Semiconductor | MOSFET 40V Dual N & P Chan PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 6.1 A | 26 mOhms | Enhancement | PowerTrench | |||||
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1,236
In-stock
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Fairchild Semiconductor | MOSFET 20a 55V N-Channel UltraFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 20 A | 26 mOhms | Enhancement | ||||||
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477
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 4 V | 74 nC | Enhancement | ||||
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1,474
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12.2 A | 26 mOhms | 1 V | 9.2 nC | Enhancement | ||||
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2,500
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 38 A | 26 mOhms | ||||||||||
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24
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | 93.3 nC | Enhancement | |||||
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60
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.5 A | 26 mOhms | - 1 V | 23.7 nC | Enhancement | ||||
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4,330
In-stock
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Toshiba | MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 12 V | SMD/SMT | WCSP6C-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5 A | 26 mOhms | - 1.2 V | 9.8 nC | |||||
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GET PRICE |
8,400
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 26 mOhms | 1.3 V | 2.1 nC | NexFET | |||
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2,557
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 26 mOhms | 1.3 V | 4.8 nC | Enhancement | |||||
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2,734
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | Enhancement | ||||||
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VIEW | Fairchild Semiconductor | MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 26 mOhms | 3 V | 86 nC |
