- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
50,000
In-stock
|
onsemi | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | Enhancement | QFET | |||||
|
3,657
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 47 A | 26 mOhms | Enhancement | QFET | ||||||
|
1,860
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | QFET | ||||||
|
126
In-stock
|
IXYS | MOSFET 82 Amps 300V 0.026 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 26 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||||
|
717
In-stock
|
Fairchild Semiconductor | MOSFET -60V -30A P-Channel | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | |||||||
|
VIEW | IXYS | MOSFET 110 Amps 300V 0.026 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 110 A | 26 mOhms | Enhancement | |||||||
|
131
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 65A 26mOhm 70nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement |