- Manufacture :
- Package / Case :
- Number of Channels :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,925
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 15.5 mOhms | 11 nC | |||||||
|
|
614
In-stock
|
STMicroelectronics | MOSFET Dual N-Ch 30V 10A STripFET V Pwr | 22 V | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 15.5 mOhms | 1 V | 5.4 nC | ||||||
|
|
3,164
In-stock
|
Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET | |||
|
|
2,495
In-stock
|
Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET |
