- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,220
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 17mOhms 15nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 15.5 mOhms | 3 V | 15 nC | Enhancement | ||||
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1,382
In-stock
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Fairchild Semiconductor | MOSFET MV7 N Channel Power Trench MosFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 15.5 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
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422
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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3,925
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 15.5 mOhms | 11 nC | ||||||||
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723
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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614
In-stock
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STMicroelectronics | MOSFET Dual N-Ch 30V 10A STripFET V Pwr | 22 V | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 15.5 mOhms | 1 V | 5.4 nC | |||||||
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3,164
In-stock
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Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET | ||||
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2,495
In-stock
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Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET | ||||
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1,498
In-stock
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Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 15.5 mOhms | 700 mV | 8.6 nC | Enhancement | NexFET | |||
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83
In-stock
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Texas instruments | MOSFET 12 V N-ChanNexFET? Power MOSFET 6-DSBGA | 10 V | SMD/SMT | DSBGA-6 | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 15.5 mOhms | |||||||||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 30 A | 15.5 mOhms | 1.5 V | 32 nC | Enhancement | ||||
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GET PRICE |
30,170
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 20 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 20 A | 15.5 mOhms | OptiMOS | ||||||
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3,077
In-stock
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IR / Infineon | MOSFET MOSFT 20V 50A 11mOhm 7nC Log Lvl | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 50 A | 15.5 mOhms | 7 nC | ||||||||
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15
In-stock
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IR / Infineon | MOSFET MOSFT 20V 50A 11mOhm 7nC Qg Log Lvl | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 50 A | 15.5 mOhms | 7 nC | ||||||||
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295
In-stock
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IR / Infineon | MOSFET MOSFT 20V 49A 11mOhm 7.2nC Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 49 A | 15.5 mOhms | 7.2 nC |
