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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP180N10N3 G
1+
$1.040
10+
$0.881
100+
$0.677
500+
$0.598
RFQ
422
In-stock
Infineon Technologies MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 43 A 15.5 mOhms 2 V 25 nC Enhancement OptiMOS
IPP180N10N3GXKSA1
1+
$1.040
10+
$0.881
100+
$0.677
500+
$0.598
RFQ
723
In-stock
Infineon Technologies MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 43 A 15.5 mOhms 2 V 25 nC Enhancement OptiMOS
IRL3715ZLPBF
1+
$1.670
10+
$0.844
100+
$0.711
500+
$0.671
RFQ
3,077
In-stock
IR / Infineon MOSFET MOSFT 20V 50A 11mOhm 7nC Log Lvl Through Hole TO-262-3     Tube 1 Channel Si N-Channel 20 V 50 A 15.5 mOhms   7 nC    
IRLU3715ZPBF
1+
$1.380
10+
$0.695
100+
$0.585
500+
$0.553
RFQ
295
In-stock
IR / Infineon MOSFET MOSFT 20V 49A 11mOhm 7.2nC Qg log lvl Through Hole TO-251-3     Tube 1 Channel Si N-Channel 20 V 49 A 15.5 mOhms   7.2 nC    
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