- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,382
In-stock
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Fairchild Semiconductor | MOSFET MV7 N Channel Power Trench MosFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 15.5 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
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422
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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723
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 30 A | 15.5 mOhms | 1.5 V | 32 nC | Enhancement | ||||
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GET PRICE |
30,170
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 20 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 20 A | 15.5 mOhms | OptiMOS |
