- Manufacture :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,220
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 17mOhms 15nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 15.5 mOhms | 3 V | 15 nC | Enhancement | ||||
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3,164
In-stock
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Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET | ||||
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2,495
In-stock
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Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET | ||||
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1,498
In-stock
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Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 15.5 mOhms | 700 mV | 8.6 nC | Enhancement | NexFET |
