- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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154,200
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CHANNEL MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 52 A | 49 mOhms | Enhancement | ||||||
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522
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49 A | 49 mOhms | 2 V | 93 nC | Enhancement | |||||
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573
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 59 A | 49 mOhms | Enhancement | ||||||
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95
In-stock
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IXYS | MOSFET 100 Amps 500V 0.05 Ohms Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 100 A | 49 mOhms | 5 V | 240 nC | Enhancement | PolarHV, HiPerFET | |||
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8,570
In-stock
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Nexperia | MOSFET 30 V, N-channel Trench MOSFET | 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 3.2 A | 49 mOhms | 1.5 V | 3.6 nC | Enhancement | |||||
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1,815
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 4.5A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | ||||
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27
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 100 A | 49 mOhms | 255 nC | HyperFET | |||||||
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GET PRICE |
5,800
In-stock
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IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | Enhancement | |||||
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42
In-stock
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IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT, HiPerFET | |||
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4,960
In-stock
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onsemi | MOSFET POWER MOSFET | 10 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 49 mOhms | ||||||||
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8
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/82A | 30 V | Screw Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 82 A | 49 mOhms | 255 nC | HyperFET | |||||||
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18
In-stock
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IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | Enhancement | ||||||
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1,913
In-stock
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Fairchild Semiconductor | MOSFET 60V Dual N-Channel Logic Level UltraFER | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5.1 A | 49 mOhms | ||||||||
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31,770
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 52 A | 49 mOhms | Enhancement | ||||||
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18
In-stock
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IXYS | MOSFET 500V 100A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 90 A | 49 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | 5 V | 105 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET OptiMOS3 Sm-Signl 60V 60mOhm 1.5A | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2.5A 6Pin | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 49 mOhms | Enhancement | ||||||
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2,267
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 6 A | 49 mOhms | 11 nC | ||||||
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4,405
In-stock
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onsemi | MOSFET PCH 1.2V DRIVE SERIES | SOT-563-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 49 mOhms |
