- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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4,960
In-stock
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onsemi | MOSFET POWER MOSFET | 10 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 49 mOhms | ||||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2.5A 6Pin | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 49 mOhms | Enhancement | ||||
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2,267
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 6 A | 49 mOhms | 11 nC |
