- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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140
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
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50
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
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182
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
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188
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
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81,082
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.3 A | 210 mOhms | Enhancement | ||||||
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225
In-stock
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IXYS | MOSFET Polar HiperFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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3,762
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | ||||
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3,170
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | ||||
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2,030
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | 21 nC | ||||||
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2,728
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 10 A | 210 mOhms | 5.3 nC | ||||||||
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1,281
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | |||||
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1,984
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | ||||||||
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1,041
In-stock
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Nexperia | MOSFET P-CH -20 V -1.2 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 1.2 A | 210 mOhms | 4 nC | ||||||||||
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1,982
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.4 A | 210 mOhms | 4 V | 25 nC | |||||
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7
In-stock
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IXYS | MOSFET 38 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 210 mOhms | Enhancement | HyperFET | |||||
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55
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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27
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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150
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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50
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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50
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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310,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | |||||
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12
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 47 A | 210 mOhms | 4 V | 305 nC | Enhancement | ||||||
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48,955
In-stock
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Nexperia | MOSFET 20V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | 0.95 V | 1.4 nV | Enhancement | ||||||
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9,600
In-stock
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onsemi | MOSFET 65V SMARTFET | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 70 V | 3.8 A | 210 mOhms | ||||||||||
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VIEW | Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | ||||
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VIEW | onsemi | MOSFET NFET 60V HD+ | 14 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 6.5 A | 210 mOhms | Enhancement | ||||||
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VIEW | Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 31 A | 210 mOhms | 2.5 V | 303 nC | Enhancement | |||||||
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VIEW | Toshiba | MOSFET Vds=20V Id=1.2A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | Enhancement | ||||||
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1,469
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms |
