- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
140
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | ||||
|
|
81,082
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.3 A | 210 mOhms | Enhancement | |||||
|
|
3,762
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | |||
|
|
3,170
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | |||
|
|
2,030
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | 21 nC | |||||
|
|
2,728
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 10 A | 210 mOhms | 5.3 nC | |||||||
|
|
1,281
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | ||||
|
|
1,041
In-stock
|
Nexperia | MOSFET P-CH -20 V -1.2 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 1.2 A | 210 mOhms | 4 nC | |||||||||
|
|
1,982
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.4 A | 210 mOhms | 4 V | 25 nC | ||||
|
|
310,000
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | ||||
|
|
48,955
In-stock
|
Nexperia | MOSFET 20V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | 0.95 V | 1.4 nV | Enhancement | |||||
|
|
9,600
In-stock
|
onsemi | MOSFET 65V SMARTFET | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 70 V | 3.8 A | 210 mOhms | |||||||||
|
|
VIEW | Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | |||
|
|
VIEW | onsemi | MOSFET NFET 60V HD+ | 14 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 6.5 A | 210 mOhms | Enhancement | |||||
|
|
VIEW | Toshiba | MOSFET Vds=20V Id=1.2A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | Enhancement |
