- Manufacture :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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2,728
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 10 A | 210 mOhms | 5.3 nC | ||||||
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1,281
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement |
