- Vgs - Gate-Source Voltage :
- Mounting Style :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,355
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 320 mOhms | 27 nC | Enhancement | |||||
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100
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | ||||||
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776
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 2 V | 19.5 nC | Enhancement | ||||
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375
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.3 A | 320 mOhms | Enhancement | QFET | |||||
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283
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 2 V | 19.5 nC | Enhancement | ||||
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613
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 320 mOhms | 2 V to 4 V | 19 nC | Enhancement | ||||
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43
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | ||||||
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60
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | |||
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498
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 12 A | 320 mOhms | 2 V to 4 V | 19 nC | Enhancement | |||||
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240
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 320 mOhms | 2.5 V | 25 nC | Enhancement | CoolMOS | |||
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10
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A | 30 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 28 A | 320 mOhms | 195 nC | HyperFET | ||||||
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3
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 35 A | 320 mOhms | 2.5 V | 305 nC | Enhancement | |||||
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984
In-stock
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Fairchild Semiconductor | MOSFET SUPERFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 320 mOhms | Enhancement | ||||||
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246
In-stock
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Fairchild Semiconductor | MOSFET 500v QFET | TO-3PN-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 320 mOhms | |||||||||||
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5
In-stock
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IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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1,400
In-stock
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onsemi | MOSFET NCH 10A 250V TP-FA(DPAK) | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 320 mOhms | 2.5 V | 16 nC | Enhancement | ||||
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30
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 27 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 320 mOhms | 2.5 V | 25 nC | Enhancement | CoolMOS | |||
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VIEW | IXYS | MOSFET 23 Amps 600V 0.32 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 320 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 23 Amps 600V 0.320 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 320 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 25 Amps 900V 0.32W Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 900 V | 25 A | 320 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.3A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 320 mOhms | Enhancement | ||||||
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628
In-stock
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onsemi | MOSFET NCH 10A 250V TP(IPAK | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 10 A | 320 mOhms | 2.5 V | 16 nC | Enhancement |
