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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF14NM50N
1+
$3.020
10+
$2.570
100+
$2.230
250+
$2.110
RFQ
1,355
In-stock
STMicroelectronics MOSFET N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 12 A 320 mOhms   27 nC Enhancement
STD16N65M2
1+
$2.360
10+
$2.000
100+
$1.600
500+
$1.410
2500+
$1.090
RFQ
776
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 11 A 320 mOhms 2 V 19.5 nC Enhancement
STF16N65M2
1+
$2.510
10+
$2.130
100+
$1.700
500+
$1.490
RFQ
283
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 11 A 320 mOhms 2 V 19.5 nC Enhancement
STF16N60M2
1+
$1.930
10+
$1.640
100+
$1.310
500+
$1.150
RFQ
613
In-stock
STMicroelectronics MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 12 A 320 mOhms 2 V to 4 V 19 nC Enhancement
STP16N60M2
1+
$2.490
10+
$2.120
100+
$1.700
500+
$1.490
RFQ
498
In-stock
STMicroelectronics MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... 25 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 12 A 320 mOhms 2 V to 4 V 19 nC Enhancement
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