- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,355
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 320 mOhms | 27 nC | Enhancement | |||||
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776
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 2 V | 19.5 nC | Enhancement | ||||
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283
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 2 V | 19.5 nC | Enhancement | ||||
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613
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 320 mOhms | 2 V to 4 V | 19 nC | Enhancement | ||||
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498
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 12 A | 320 mOhms | 2 V to 4 V | 19 nC | Enhancement |